The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Aug. 30, 2012
Applicants:

Matthew Goldman, Folsom, CA (US);

Mark A. Helm, Santa Cruz, CA (US);

Jaydip B. Patel, Folsom, CA (US);

Thomas F. Ryan, Folsom, CA (US);

Inventors:

Matthew Goldman, Folsom, CA (US);

Mark A. Helm, Santa Cruz, CA (US);

Jaydip B. Patel, Folsom, CA (US);

Thomas F. Ryan, Folsom, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01);
Abstract

Devices and methods facilitate memory device operation in all bit line architecture memory devices. In at least one embodiment, memory cells comprising alternating rows are concurrently programmed by row and concurrently sensed by row at a first density whereas memory cells comprising different alternating rows are concurrently programmed by row and concurrently sensed by row at a second density. In at least one additional embodiment, memory cells comprising alternating tiers of memory cells are programmed and sensed by tier at a first density and memory cells comprising different alternating tiers of memory cells are programmed and sensed by tier at a second density.


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