The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jul. 30, 2008
Ching-cheng Huang, Hsin-Chu, TW;
Chuen-jye Lin, Taichung, TW;
Ming-ta Lei, Hsinchu, TW;
Mou-shiung Lin, Hsinchu, TW;
Ching-Cheng Huang, Hsin-Chu, TW;
Chuen-Jye Lin, Taichung, TW;
Ming-Ta Lei, Hsinchu, TW;
Mou-Shiung Lin, Hsinchu, TW;
Qualcomm Incorporated, San Diego, CA (US);
Abstract
In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.