The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Nov. 13, 2012
Intermolecular, Inc., San Jose, CA (US);
Imran Hashim, Saratoga, CA (US);
Hanhong Chen, Milpitas, CA (US);
Tony Chiang, Campbell, CA (US);
Indranil De, Fremont, CA (US);
Nobumichi Fuchigami, Sunnyvale, CA (US);
Edward Haywood, San Jose, CA (US);
Pragati Kumar, Santa Clara, CA (US);
Sandra Malhotra, Fort Collins, CO (US);
Sunil Shanker, Santa Clara, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.