The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Mar. 05, 2014
Intermolecular, Inc., San Jose, CA (US);
Frank Greer, Pasadena, CA (US);
Edwin Adhiprakasha, Mountain View, CA (US);
Chi-I Lang, Cupertino, CA (US);
Ratsamee Limdulpaiboon, San Jose, CA (US);
Sandip Niyogi, San Jose, CA (US);
Kurt Pang, Fremont, CA (US);
J. Watanabe, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeOpromotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.