The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Sep. 06, 2011
Applicants:

Umesh Mishra, Montecito, CA (US);

Srabanti Chowdhury, Goleta, CA (US);

Yuvaraj Dora, Goleta, CA (US);

Inventors:

Umesh Mishra, Montecito, CA (US);

Srabanti Chowdhury, Goleta, CA (US);

Yuvaraj Dora, Goleta, CA (US);

Assignee:

Transphorm Inc., Goleta, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/66212 (2013.01); H01L 29/404 (2013.01); H01L 29/7786 (2013.01); H01L 29/402 (2013.01); H01L 29/2003 (2013.01); H01L 29/872 (2013.01); H01L 29/66462 (2013.01); H01L 29/42376 (2013.01); H01L 29/41766 (2013.01);
Abstract

Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications. A guard ring is a floating electrode formed of electrically conducting material above a semiconductor material layer. A portion of an insulating layer is between at least a portion of the guard ring and the semiconductor material layer. A guard ring may be located, for example, on a transistor between a gate and a drain electrode. A semiconductor device may have one or more guard rings.


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