The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Sep. 09, 2013
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Ji-Gang Pan, Beijing, CN;

Han-Chuan Fang, Singapore, SG;

Boon-Tiong Neo, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3212 (2013.01); H01L 21/02057 (2013.01);
Abstract

A polishing method of a semiconductor device is disclosed. A substrate having a first side and a second side opposite to the first side is provided. The substrate has a device layer formed on the first side and a plurality of trench isolation structures therein extending from the first side to the second side. A main polishing step is performed to the second side of the substrate until a surface of at least one of the trench isolation structures is exposed. An auxiliary polishing step is then performed to the second side of the substrate. Besides, a silicon-to-oxide selectivity of the main polishing step is different from a silicon-to-oxide selectivity of the auxiliary step.


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