The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Aug. 07, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Ming-Huan Tsai, Zhubei, TW;
Chun-Fai Cheng, Tin Shui Wai, HK;
Hui Ouyang, Chubei, TW;
Yuan-Hung Chiu, Taipei, TW;
Yen-Ming Chen, Chu-Pei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66515 (2013.01); H01L 21/823814 (2013.01); H01L 29/6656 (2013.01); H01L 29/66628 (2013.01); H01L 21/265 (2013.01); H01L 21/823807 (2013.01); H01L 29/7848 (2013.01); H01L 29/66636 (2013.01); H01L 21/26586 (2013.01);
Abstract
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.