The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Dec. 19, 2012
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chun Hsiung Tsai, Xinpu Township, TW;
Meng-Yueh Liu, Taoyuan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/28 (2006.01); H01L 29/772 (2006.01); H01L 21/02 (2006.01); H01L 29/68 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02518 (2013.01); H01L 29/68 (2013.01);
Abstract
The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) descried enable forming an epitaxially grown silicon-containing material without using GeHin an etch gas mixture of an etch process for a cyclic deposition/etch (CDE) process. The etch process is performed at a temperature different form the deposition process to make the etch gas more efficient. As a result, the etch time is reduced and the throughput is increased.