The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Dec. 27, 2012
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Haifan Liang, Fremont, CA (US);
Jessica Eid, San Jose, CA (US);
Jeroen Van Duren, Palo Alto, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01); H01L 31/065 (2012.01); H01L 31/0749 (2012.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 31/0322 (2013.01); H01L 31/03923 (2013.01); H01L 31/03928 (2013.01); H01L 31/065 (2013.01); H01L 31/0749 (2013.01); H01L 21/02551 (2013.01); Y02E 10/541 (2013.01);
Abstract
A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.