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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8896119 B1

PDFFull Text
Date of Patent:
Nov. 25, 2014

Filed:

Aug. 03, 2011

Bonding material for semiconductor devices

Applicants:

Yoshitsugu Sakamoto, Kariya, JP;

Hiroyuki Yamada, Kariya, JP;

Yoshie Yamanaka, Tokyo, JP;

Tsukasa Ohnishi, Tokyo, JP;

Shunsaku Yoshikawa, Tokyo, JP;

Kenzo Tadokoro, Tokyo, JP;

Inventors:

Yoshitsugu Sakamoto, Kariya, JP;

Hiroyuki Yamada, Kariya, JP;

Yoshie Yamanaka, Tokyo, JP;

Tsukasa Ohnishi, Tokyo, JP;

Shunsaku Yoshikawa, Tokyo, JP;

Kenzo Tadokoro, Tokyo, JP;

Assignee:

Senju Metal Industry Co., Ltd., Tokyo, JP;

Attorney:

Michael Tobias

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); C22C 1/08 (2006.01); B23K 35/02 (2006.01); B23K 35/30 (2006.01); H01L 23/373 (2006.01); C22C 9/02 (2006.01); C22C 13/00 (2006.01); B23K 35/26 (2006.01); H05K 3/34 (2006.01);
U.S. Cl.
CPC ...
B23K 35/262 (2013.01); H01L 2924/0665 (2013.01); H01L 2224/2929 (2013.01); H01L 24/07 (2013.01); H01L 24/48 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/10253 (2013.01); H01L 2224/83801 (2013.01); H05K 3/3463 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01028 (2013.01); H01L 2224/29299 (2013.01); C22C 1/08 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/01021 (2013.01); H01L 2924/01078 (2013.01); H01L 24/73 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/29 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01029 (2013.01); B23K 35/025 (2013.01); H01L 2224/29101 (2013.01); H01L 24/83 (2013.01); H01L 2224/48472 (2013.01); H01L 24/32 (2013.01); H01L 2224/83444 (2013.01); H01L 2224/29198 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/01033 (2013.01); B23K 35/302 (2013.01); H01L 2224/83065 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01047 (2013.01); H01L 2224/32014 (2013.01); H01L 24/45 (2013.01); H01L 23/3735 (2013.01); C22C 9/02 (2013.01); H01L 2924/014 (2013.01); C22C 13/00 (2013.01); H01L 2224/2919 (2013.01); H01L 2924/01079 (2013.01); H01L 2224/8384 (2013.01); B23K 2201/40 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01006 (2013.01); H01L 2224/8309 (2013.01); H01L 2924/01014 (2013.01); B22F 2998/00 (2013.01); H01L 2224/83455 (2013.01); H01L 24/29 (2013.01); H01L 2924/01004 (2013.01); H05K 2201/0116 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/00013 (2013.01);
Abstract

A semiconductor device is provided which has internal bonds which do not melt at the time of mounting on a substrate. A bonding material is used for internal bonding of the semiconductor device. The bonding material is obtained by filling the pores of a porous metal body having a mesh-like structure and covering the surface thereof with Sn or an Sn-based solder alloy.

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