The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Apr. 03, 2012
Yongtaek Lee, Seoul, KR;
Hyuntai Kim, Kyungki Do, KR;
Gwang Kim, Kyungki-Do, KR;
Byunghoon Ahn, Kyungki-Do, KR;
YongTaek Lee, Seoul, KR;
HyunTai Kim, Kyungki Do, KR;
Gwang Kim, Kyungki-Do, KR;
ByungHoon Ahn, Kyungki-Do, KR;
STATS ChipPAC, Ltd., Singapore, SG;
Abstract
A semiconductor wafer has an insulating layer over a first surface of the substrate. An IPD structure is formed over the insulating layer. The IPD structure includes a MIM capacitor and inductor. A conductive via is formed through a portion of the IPD structure and partially through the substrate. The conductive via can be formed in first and second portions. The first portion is formed partially through the substrate and second portion is formed through a portion of the IPD structure. A first via is formed through a second surface of the substrate to the conductive via. A shielding layer is formed over the second surface of the substrate wafer. The shielding layer extends into the first via to the conductive via. The shielding layer is electrically connected through the conductive via to an external ground point. The semiconductor wafer is singulated through the conductive via.