The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Feb. 06, 2013
Tokyo Electron Limited, Tokyo, JP;
Yu Wamura, Oshu, JP;
Koji Akiyama, Nirasaki, JP;
Shingo Hishiya, Nirasaki, JP;
Katsushige Harada, Nirasaki, JP;
Tokyo Electron Limited, , JP;
Abstract
Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiOfilm having an interface control function on the lower electrode layer; forming a ZrO-based film on the first TiOfilm; performing an annealing process for crystallizing ZrOin the ZrO-based film, after forming the ZrO-based film; forming a second TiOfilm which serves as a capacity film on the ZrO-based film; and forming an upper electrode layer on the second TiOfilm.