The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Sep. 16, 2008
Junjun Liu, Austin, TX (US);
Jacques Faguet, Albany, NY (US);
Eric M. Lee, Austin, TX (US);
Dorel I. Toma, Dripping Springs, TX (US);
Hongyu Yue, Plano, TX (US);
Junjun Liu, Austin, TX (US);
Jacques Faguet, Albany, NY (US);
Eric M. Lee, Austin, TX (US);
Dorel I. Toma, Dripping Springs, TX (US);
Hongyu Yue, Plano, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.