The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Oct. 15, 2013
Applied Materials, Inc., Santa Clara, CA (US);
Yong Cao, San Jose, CA (US);
Xianmin Tang, San Jose, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Wei D. Wang, San Jose, CA (US);
Zhendong Liu, Tracy, CA (US);
Kevin Moraes, Fremont, CA (US);
Muhammad M. Rasheed, San Jose, CA (US);
Thanh X. Nguyen, San Jose, CA (US);
Ananthkrishna Jupudi, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.