The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Aug. 13, 2012
Applicants:
Peter Irsigler, Obernberg/Inn, AT;
Thomas Neidhart, Klagenfurt, AT;
Guenter Schagerl, Finkenstein, AT;
Hans-joachim Schulze, Taufkirchen, DE;
Inventors:
Peter Irsigler, Obernberg/Inn, AT;
Thomas Neidhart, Klagenfurt, AT;
Guenter Schagerl, Finkenstein, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 21/3063 (2006.01); H01L 29/06 (2006.01); H01L 21/306 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 29/0878 (2013.01); H01L 21/26513 (2013.01); H01L 29/66333 (2013.01); H01L 29/36 (2013.01); H01L 21/3063 (2013.01); H01L 29/0847 (2013.01); H01L 29/0603 (2013.01); H01L 21/30608 (2013.01); H01L 29/66136 (2013.01); H01L 29/66712 (2013.01);
Abstract
One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities.