The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Sep. 04, 2009
Applicants:

Harry Hak-lay Chuang, Hsinchu, TW;

Kong-beng Thei, Pao-Shan Village, TW;

Sheng-chen Chung, Jhubei, TW;

Chiung-han Yeh, Tainan, TW;

Lee-wee Teo, Singapore, SG;

Yu-ying Hsu, Pingzhen, TW;

Bao-ru Young, Zhubei, TW;

Inventors:

Harry Hak-Lay Chuang, Hsinchu, TW;

Kong-Beng Thei, Pao-Shan Village, TW;

Sheng-Chen Chung, Jhubei, TW;

Chiung-Han Yeh, Tainan, TW;

Lee-Wee Teo, Singapore, SG;

Yu-Ying Hsu, Pingzhen, TW;

Bao-Ru Young, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823842 (2013.01); H01L 27/0629 (2013.01); H01L 27/0922 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/6659 (2013.01); H01L 28/20 (2013.01);
Abstract

The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.


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