The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Mar. 20, 2009
Mark C. Hakey, Fairfax, VT (US);
Tak H. Ning, Yorktown Heights, NY (US);
Philip J. Oldiges, Lagrangeville, NY (US);
Henry H. K. Tang, Poughkeepsie, NY (US);
Mark C. Hakey, Fairfax, VT (US);
Tak H. Ning, Yorktown Heights, NY (US);
Philip J. Oldiges, Lagrangeville, NY (US);
Henry H. K. Tang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention relates to a design structure, and more particularly, to a design structure for a heavy ion tolerant device, method of manufacturing the same and a structure thereof. The structure includes a first device having a diffusion comprising a drain region and source region and a second device having a diffusion comprising a drain region and source region. The first and second device are aligned in an end-to-end layout along a width of the diffusion of the first device and the second device. A first isolation region separating the diffusion of the first device and the second device.