The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
May. 06, 2010
Applicants:
Cheng-chi Lin, Toucheng Township, Yilan County, TW;
Chen-yuan Lin, Taitung, TW;
Shih-chin Lien, Sinihuang, TW;
Shyi-yuan Wu, Hsinchu, TW;
Inventors:
Cheng-Chi Lin, Toucheng Township, Yilan County, TW;
Chen-Yuan Lin, Taitung, TW;
Shih-Chin Lien, Sinihuang, TW;
Shyi-Yuan Wu, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/66689 (2013.01); H01L 29/1087 (2013.01); H01L 29/42368 (2013.01);
Abstract
A lateral power MOSFET with a low specific on-resistance is described. Stacked P-top and N-grade regions in patterns of articulated circular arcs separate the source and drain of the transistor.