The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Feb. 23, 2012
Applicants:
Yuan-shun Chang, Taipei, TW;
Kao-way Tu, New Taipei, TW;
Yi-yun Tsai, Penghu County, TW;
Inventors:
Assignee:
Super Group Semiconductor Co., Ltd., New Taipei, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A closed cell trenched power semiconductor structure is provided. The closed cell trenched power semiconductor structure has a substrate and cells. The cells are arranged on the substrate in an array. Every cell has a body and a trenched gate. The trenched gate surrounds the body. A side wall of the trenched gate facing body has a concave.
Chang, Yuan-Shun. (2014). Closed cell trenched power semiconductor structure (U.S. Patent No. 8890242). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8890242
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile