The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 17, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01); H01L 27/08 (2006.01); H01L 23/64 (2006.01); H01L 23/48 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 27/0805 (2013.01); H01L 23/642 (2013.01); H01L 23/481 (2013.01); H01L 23/5223 (2013.01);
Abstract
A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A metal-insulator-metal (MIM) capacitor structure is disposed over the substrate. A dual damascene structure disposed over and electrically coupled with the TSV structure, wherein the dual damascene structure includes a via portion and a trench portion A first dielectric layer is disposed around the via portion of the dual damascene structure. A second dielectric layer disposed around the trench portion of the dual damascene, wherein the second dielectric layer is disposed over the MIM capacitor structure.