Semiconductor device and method for fabricating semiconductor buried layer

Abstract

The present disclosure provides a semiconductor device and a method for fabricating a semiconductor buried layer. The method includes: preparing a substrate which includes a first oxide layer; forming a first buried layer region in the surface of the substrate by using a photoresist layer with a first buried layer region pattern as a mask, in which a doping state of the first buried layer region is different from a doping state of other region of the substrate; forming a second oxide layer on the surface of the substrate and the first buried layer region; and forming a second buried layer region in the surface of the substrate through self alignment process by using the second oxide layer as a mask. The method disclosed by the present disclosure reduces the complexity of the buried layer procedures and the cost thereof, as well as the probability of crystal defects.