The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 29, 2011
Wen-sheng Wu, Hsin-Chu, TW;
Fei-fan Chen, Hsin-Chu, TW;
Chia-i Shen, Hsin-Chu, TW;
Hua-sheng Chiu, Zhudong Town, TW;
Wen-Sheng Wu, Hsin-Chu, TW;
Fei-Fan Chen, Hsin-Chu, TW;
Chia-I Shen, Hsin-Chu, TW;
Hua-Sheng Chiu, Zhudong Town, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.