The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
May. 03, 2010
Applicants:
Anupama Mallikarjunan, Macungie, PA (US);
Raymond Nicholas Vrtis, Orefield, PA (US);
Laura M. Matz, Allentown, PA (US);
Mark Leonard O'neill, San Marcos, CA (US);
Andrew David Johnson, Doylestown, PA (US);
Manchao Xiao, San Diego, CA (US);
Inventors:
Anupama Mallikarjunan, Macungie, PA (US);
Raymond Nicholas Vrtis, Orefield, PA (US);
Laura M. Matz, Allentown, PA (US);
Mark Leonard O'Neill, San Marcos, CA (US);
Andrew David Johnson, Doylestown, PA (US);
Manchao Xiao, San Diego, CA (US);
Assignee:
Air Products and Chemicals, Inc., Allentown, PA (US);
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); H01L 21/02 (2006.01); H01L 21/314 (2006.01); H01L 21/768 (2006.01); C23C 16/36 (2006.01);
U.S. Cl.
CPC ...
C23C 16/36 (2013.01); H01L 21/02211 (2013.01); H01L 21/3148 (2013.01); H01L 21/76834 (2013.01); H01L 21/76831 (2013.01); H01L 21/02167 (2013.01); H01L 21/02274 (2013.01);
Abstract
A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;