The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 03, 2010
Masayuki Uto, Tokyo, JP;
Tuneaki Tomonaga, Tokyo, JP;
Toshimichi Kubota, Tokyo, JP;
Fukuo Ogawa, Tokyo, JP;
Yasuhito Narushima, Tokyo, JP;
Masayuki Uto, Tokyo, JP;
Tuneaki Tomonaga, Tokyo, JP;
Toshimichi Kubota, Tokyo, JP;
Fukuo Ogawa, Tokyo, JP;
Yasuhito Narushima, Tokyo, JP;
Sumco Techxiv Corporation, Nagasaki, JP;
Abstract
The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.