The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Sep. 05, 2012
Su-kyoung Kim, Suwon-si, KR;
Gil-heyun Choi, Seoul, KR;
Byung-lyul Park, Seoul, KR;
Kwang-jin Moon, Hwaseong-si, KR;
Kun-sang Park, Hwaseong-si, KR;
Dong-chan Lim, Gangneung-si, KR;
Do-sun Lee, Gwangju, KR;
Su-kyoung Kim, Suwon-si, KR;
Gil-heyun Choi, Seoul, KR;
Byung-lyul Park, Seoul, KR;
Kwang-jin Moon, Hwaseong-si, KR;
Kun-sang Park, Hwaseong-si, KR;
Dong-chan Lim, Gangneung-si, KR;
Do-sun Lee, Gwangju, KR;
Abstract
An integrated circuit device includes a substrate through which a first through-hole extends, and an interlayer insulating film on the substrate, the interlayer insulating film having a second through-hole communicating with the first through-hole. A Through-Silicon Via (TSV) structure is provided in the first through-hole and the second through-hole. The TSV structure extends to pass through the substrate and the interlayer insulating film. The TSV structure comprises a first through-electrode portion having a top surface located in the first through-hole, and a second through-electrode portion having a bottom surface contacting with the top surface of the first through-electrode portion and extending from the bottom surface to at least the second through-hole. Related fabrication methods are also described.