The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Mar. 01, 2012
Yi-fang LI, Baoshan Township, TW;
Chun-li Lin, Hsinchu, TW;
Chun-sheng Wu, Hsinchu, TW;
Ding-i Liu, Hsinchu, TW;
Yi-Fang Li, Baoshan Township, TW;
Chun-Li Lin, Hsinchu, TW;
Chun-Sheng Wu, Hsinchu, TW;
Ding-I Liu, Hsinchu, TW;
Abstract
The description relates to a method of patterning a semiconductor device to create a through substrate via. The method produces a through substrate via having no photoresist material therein. An intermediate layer deposited over an interlayer dielectric prevents etching solutions from etching interlayer dielectric sidewalls to prevent peeling. The description relates to a semiconductor apparatus including a semiconductor substrate having a through substrate via therein. The semiconductor apparatus further includes an interlayer dielectric over the semiconductor substrate and an intermediate layer over semiconductor substrate and over sidewalls of the interlayer dielectric.