The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Feb. 15, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Felix P. Anderson, Colchester, VT (US);

Thomas L. McDevitt, Underhill, VT (US);

Anthony K. Stamper, Williston, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81C 1/00 (2006.01); H01H 59/00 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01H 59/00 (2013.01); B81B 2203/0118 (2013.01); B81C 1/00182 (2013.01); B81B 2203/04 (2013.01); G06F 17/5068 (2013.01); B81B 2201/014 (2013.01); B81C 2201/0107 (2013.01); B81B 2207/07 (2013.01);
Abstract

A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.


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