The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Feb. 09, 2012
Applicant:
Sang IN Lee, Sunnyvale, CA (US);
Inventor:
Sang In Lee, Sunnyvale, CA (US);
Assignee:
Veeco ALD Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/50 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/308 (2013.01); C23C 16/403 (2013.01); C23C 16/405 (2013.01); C23C 16/45551 (2013.01); C23C 16/45542 (2013.01);
Abstract
Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
Published as:
US2012207948A1; WO2012112584A2; WO2012112584A3; TW201247925A; KR20130135917A; US8877300B2; US2015020737A1; TWI512134B; KR101608368B1;