The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Aug. 06, 2012
Hideaki Kawahara, Tokyo, JP;
Marie Denison, Plano, TX (US);
Sameer Pendharkar, Allen, TX (US);
Philip L. Hower, Concord, MA (US);
John Lin, Chelmsford, MA (US);
Robert A. Neidorff, Bedford, NH (US);
Hideaki Kawahara, Tokyo, JP;
Marie Denison, Plano, TX (US);
Sameer Pendharkar, Allen, TX (US);
Philip L. Hower, Concord, MA (US);
John Lin, Chelmsford, MA (US);
Robert A. Neidorff, Bedford, NH (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit containing a gate controlled voltage divider having an upper resistor on field oxide in series with a transistor switch in series with a lower resistor. A resistor drift layer is disposed under the upper resistor, and the transistor switch includes a switch drift layer adjacent to the resistor drift layer, separated by a region which prevents breakdown between the drift layers. The switch drift layer provides an extended drain or collector for the transistor switch. A sense terminal of the voltage divider is coupled to a source or emitter node of the transistor and to the lower resistor. An input terminal is coupled to the upper resistor and the resistor drift layer. A process of forming the integrated circuit containing the gate controlled voltage divider.