The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Dec. 26, 2012
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Keisuke Suzuki, Nirasaki, JP;
Kentaro Kadonaga, Nirasaki, JP;
Byoung Hoon Lee, Hwaseong-si, KR;
Eun Jo Lee, Hwaseong-si, KR;
Sung Duk Son, Hwaseong-si, KR;
Jae Hyuk Jang, Hwaseong-si, KR;
Do Hyun Park, Hwaseong-si, KR;
Assignee:
Tokyo Electron Limited, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 8/34 (2006.01); C23C 16/24 (2006.01); C23C 16/56 (2006.01); C23C 28/04 (2006.01); C23C 28/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31 (2013.01); H01L 21/02126 (2013.01); H01L 21/022 (2013.01); C23C 8/34 (2013.01); C23C 16/24 (2013.01); C23C 16/56 (2013.01); C23C 28/04 (2013.01); C23C 28/42 (2013.01);
Abstract
The method of forming a silicon oxycarbonitride film on a base includes stacking a silicon carbonitride film and a silicon oxynitride film on the base to form the silicon oxycarbonitride film.