The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Oct. 05, 2012
Srinivas D. Nemani, Sunnyvale, CA (US);
Nicolas J. Bright, Malibu, CA (US);
Thorsten B. Lill, Santa Clara, CA (US);
Yifeng Zhou, Fremont, CA (US);
Jamie Saephan, Alameda, CA (US);
Ellie Yieh, San Jose, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Nicolas J. Bright, Malibu, CA (US);
Thorsten B. Lill, Santa Clara, CA (US);
Yifeng Zhou, Fremont, CA (US);
Jamie Saephan, Alameda, CA (US);
Ellie Yieh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.