The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Jul. 23, 2012
Kuang-jung Chen, Poughkeepsie, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Brewster, NY (US);
Steven J. Holmes, Guilderland, NY (US);
Sen Liu, Highland Park, NJ (US);
Kuang-Jung Chen, Poughkeepsie, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Brewster, NY (US);
Steven J. Holmes, Guilderland, NY (US);
Sen Liu, Highland Park, NJ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.