The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Sep. 03, 2012
Applicants:
Deyan Wang, Husdon, MA (US);
Cheng-bai Xu, Southboro, MA (US);
George G. Barclay, Jefferson, MA (US);
Inventors:
Deyan Wang, Husdon, MA (US);
Cheng-Bai Xu, Southboro, MA (US);
George G. Barclay, Jefferson, MA (US);
Assignee:
Rohm and Haas Electronics Materials LLC, Marlborough, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/20 (2006.01); G03F 7/028 (2006.01);
U.S. Cl.
CPC ...
Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.