The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Nov. 12, 2009
Applicants:

Shin-rung LU, Chu-Pei, TW;

Tsai-fu Ou, Toufen Township, TW;

Wen-yao Hsieh, Sanchong, TW;

Inventors:

Shin-Rung Lu, Chu-Pei, TW;

Tsai-Fu Ou, Toufen Township, TW;

Wen-Yao Hsieh, Sanchong, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B 27/68 (2006.01); G03B 27/32 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03B 27/32 (2013.01); G03F 7/70633 (2013.01);
Abstract

A method for improving alignment in a photolithography machine is provided. The method comprises identifying first empirical alignment data that has been determined from use of a target photomask within at least one non-target tool, and identifying second empirical alignment data that has been determined from use of a non-target photomask within a target tool. The method continues by identifying third empirical alignment data that has been determined from use of a non-target photomask within at least one non-target tool, and calculating from the first, second, and third empirical alignment data a predicted alignment data for the target photomask with the target tool. The method then proceeds by aligning the target photomask within the target tool using the predicted alignment data, exposing a pattern from the target photomask onto the wafer in the target tool, and further processing the exposed wafer.


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