The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Sep. 30, 2011
Applicants:
Katsuhiko Yamamoto, Toyama, JP;
Yuji Takebayashi, Toyama, JP;
Tatsuyuki Saito, Toyama, JP;
Masahisa Okuno, Toyama, JP;
Inventors:
Katsuhiko Yamamoto, Toyama, JP;
Yuji Takebayashi, Toyama, JP;
Tatsuyuki Saito, Toyama, JP;
Masahisa Okuno, Toyama, JP;
Assignee:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 29/02 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/56 (2006.01); C23C 16/40 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67115 (2013.01); H01L 21/0228 (2013.01); C23C 16/56 (2013.01); H01L 21/02337 (2013.01); H01L 21/02189 (2013.01); C23C 16/405 (2013.01); H01L 28/40 (2013.01); H01L 21/02345 (2013.01);
Abstract
A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.