The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Feb. 02, 2011
Steven Maxwell, Sunnyvale, CA (US);
Abhijit Bandyopadhyay, San Jose, CA (US);
Kun Hou, Milpitas, CA (US);
Er-xuan Ping, Fremont, CA (US);
Yung-tin Chen, Santa Clara, CA (US);
LI Xiao, San Jose, CA (US);
Steven Maxwell, Sunnyvale, CA (US);
Abhijit Bandyopadhyay, San Jose, CA (US);
Kun Hou, Milpitas, CA (US);
Er-Xuan Ping, Fremont, CA (US);
Yung-Tin Chen, Santa Clara, CA (US);
Li Xiao, San Jose, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
In a first aspect, a vertical semiconductor diode is provided that includes (1) a first semiconductor layer formed above a substrate; (2) a second semiconductor layer formed above the first semiconductor layer; (3) a first native oxide layer formed above the first semiconductor layer; and (4) a third semiconductor layer formed above the first semiconductor layer, second semiconductor layer and first native oxide layer so as to form the vertical semiconductor diode that includes the first native oxide layer. Numerous other aspects are provided.