The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Mar. 08, 2012
Applicants:
Sang-hyeob Lee, Saratoga, CA (US);
Sang Ho Yu, Cupertino, CA (US);
Kai Wu, Palo Alto, CA (US);
Inventors:
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); C23C 16/56 (2006.01); H01L 21/768 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0272 (2013.01); C23C 16/45529 (2013.01); H01L 27/10891 (2013.01); H01L 21/28556 (2013.01); C23C 16/56 (2013.01); H01L 21/76846 (2013.01); C23C 16/34 (2013.01);
Abstract
The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.