The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Mar. 13, 2013
Applicant:

D2s, Inc., San Jose, CA (US);

Inventors:

Etienne Jacques, Sunnyvale, CA (US);

Jin Choi, Gyeonggi-do, KR;

Kazuyuki Hagiwara, Tokyo, JP;

Assignee:

D2S, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/20 (2012.01); G03F 1/36 (2012.01); G03F 7/20 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G03F 1/20 (2013.01); G06F 17/5068 (2013.01); G03F 7/2037 (2013.01); G03F 1/36 (2013.01); Y10S 430/143 (2013.01);
Abstract

A method and system for fracturing or mask data preparation is disclosed in which the central core portion of a diagonal pattern is fractured using overlapping variable shaped beam (VSB) shots, and an outer portion of the diagonal pattern is fractured using non-overlapping VSB shots. A transition region is interposed between the central core and outer pattern portions, and transition region shots are generated so as to produce in the transferred pattern a smooth transition in pattern characteristics such as line edge roughness or period of waviness, from the central core portion of the pattern to the outer portion of the pattern. Methods for forming a semiconductor device layout pattern on a reticle or substrate are also disclosed.


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