The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Nov. 26, 2012
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kun-Sang Park, Hwaseong-si, KR;
Byung-Lyul Park, Seoul, KR;
Su-Kyoung Kim, Suwon-si, KR;
Kwang-Jin Moon, Hwaseong-si, KR;
Suk-Chul Bang, Yongin-si, KR;
Do-Sun Lee, Gwangju, KR;
Dong-Chan Lim, Gangneung-si, KR;
Gil-Heyun Choi, Seoul, KR;
Abstract
Provided are electrode-connecting structures or semiconductor devices, including a lower device including a lower substrate, a lower insulating layer formed on the lower substrate, and a lower electrode structure formed in the lower insulating layer, wherein the lower electrode structure includes a lower electrode barrier layer and a lower metal electrode formed on the lower electrode barrier layer, and an upper device including an upper substrate, an upper insulating layer formed under the upper substrate, and an upper electrode structure formed in the upper insulating layer, wherein the upper electrode structure includes an upper electrode barrier layer extending from the inside of the upper insulating layer under a bottom surface thereof and an upper metal electrode formed on the upper electrode barrier layer. The lower metal electrode is in direct contact with the upper metal electrode.