The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Oct. 06, 2011
Applicants:
Koji Neishi, Sendai, JP;
Junichi Koike, Nirasaki, JP;
Kenji Matsumoto, Sendai, JP;
Inventors:
Assignees:
Tokyo Electron Limited, Tokyo, JP;
Tohoku University, Miyagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76867 (2013.01); H01L 21/76843 (2013.01); C23C 16/40 (2013.01); C23C 16/401 (2013.01); C23C 16/406 (2013.01); H01L 21/76831 (2013.01); H01L 21/76844 (2013.01); H01L 2924/12044 (2013.01);
Abstract
There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.