The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Oct. 26, 2011
Noel Rocklein, Boise, ID (US);
D. V. Nirmal Ramaswamy, Boise, ID (US);
Dale W. Collins, Boise, ID (US);
Swapnil Lengade, Boise, ID (US);
Srividya Krishnamurthy, Boise, ID (US);
Mark Korber, Boise, ID (US);
Noel Rocklein, Boise, ID (US);
D. V. Nirmal Ramaswamy, Boise, ID (US);
Dale W. Collins, Boise, ID (US);
Swapnil Lengade, Boise, ID (US);
Srividya Krishnamurthy, Boise, ID (US);
Mark Korber, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.