The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Sep. 30, 2010
Applicants:

Pushkar Ranade, Los Gatos, CA (US);

Toshifumi Mori, Hachiouji, JP;

Ken-ichi Okabe, Kuwana, JP;

Toshiki Miyake, Kuwana, JP;

Inventors:

Pushkar Ranade, Los Gatos, CA (US);

Toshifumi Mori, Hachiouji, JP;

Ken-ichi Okabe, Kuwana, JP;

Toshiki Miyake, Kuwana, JP;

Assignee:

SuVolta, Inc., Los Gatos, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26513 (2013.01); H04L 21/26506 (2013.01);
Abstract

The effects of knock-on oxide in a semiconductor substrate are reduced by providing a semiconductor substrate and forming a thin layer of native oxide on the semiconductor substrate. Ion implantation is performed through the native oxide layer. The native oxide layer reduces the phenomenon of knock-on oxide and oxygen concentration within the semiconductor substrate. Further reduction may be achieved by etching the surface of the semiconductor substrate in order to eliminate a concentration of oxygen at a surface of the semiconductor substrate.


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