The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Nov. 30, 2012
Infineon Technologies Ag, Neubiberg, DE;
Maria Cotorogea, Taufkirchen, DE;
Hans Peter Felsl, München, DE;
Yvonne Gawlina, Pullach, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Georg Seibert, Waakirchen, DE;
Andre Rainer Stegner, München, DE;
Wolfgang Wagner, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a first transistor cell including a first gate electrode in a first trench. The semiconductor device further includes a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected. The semiconductor device further includes a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches. The semiconductor device further includes a dielectric in the third trench covering a bottom side and walls of the third trench.