The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Aug. 20, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Sheng-Chen Chung, Jhubei, TW;
Wei Cheng Wu, Zhubei, TW;
Bao-Ru Young, Zhubei, TW;
Huan-Just Lin, Hsinchu, TW;
Tsai-Chun Li, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit includes a semiconductor substrate including a source region and a drain region and a gate dielectric over the semiconductor substrate. A metal gate structure is over the semiconductor substrate and the gate dielectric and between the source and drain regions. The integrated circuit further includes an interlayer dielectric (ILD) over the semiconductor substrate. First and second contacts extend through the ILD and adjacent the source and drain regions, respectively, and a third contact extends through the ILD and adjacent a top surface of the metal gate structure. The third contact further extends into an undercut region of the metal gate structure.