The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Mar. 19, 2012
Applicants:

Hanyi Ding, Essex Junction, VT (US);

Kai D. Feng, Hopewell Junction, NY (US);

Ping-chuan Wang, Hopewell Junction, NY (US);

Zhijian Yang, Hopewell Junction, NY (US);

Inventors:

Hanyi Ding, Essex Junction, VT (US);

Kai D. Feng, Hopewell Junction, NY (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Zhijian Yang, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); H01L 21/76898 (2013.01);
Abstract

A test structure for a through-silicon-via (TSV) in a semiconductor chip includes a first contact, the first contact being electrically connected to a first TSV; and a second contact, wherein the first contact, second contact, and the first TSV form a first channel, and a depth of the first TSV is determined based on a resistance of the first channel.


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