The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jun. 28, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masanobu Igeta, Tokyo, JP;

Jun Sato, Nirasaki, JP;

Kazuo Yabe, Nirasaki, JP;

Hitoshi Kato, Oshu, JP;

Yusaku Izawa, Tsukuba, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); B05D 5/06 (2006.01); C23C 20/00 (2006.01); C23C 16/06 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.


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