The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
May. 27, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Szu-Hao Lai, Kaohsiung, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
Chin-Cheng Chien, Tainan, TW;
Tien-Wei Yu, Kaohsiung, TW;
Ming-Hua Chang, Tainan, TW;
Yu-Shu Lin, Pingtung County, TW;
Tsai-Yu Wen, Tainan, TW;
Hsin-Kuo Hsu, Kaohsiung, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02634 (2013.01); H01L 21/02532 (2013.01);
Abstract
An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer.