The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Feb. 08, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment method of controlling threshold voltages in a fin field effect transistor (FinFET) includes forming a dummy gate over a central portion of a fin, the central portion of the fin disposed between exterior portions of the fin unprotected by the dummy gate, removing the exterior portions of the fin and replacing the exterior portions of the fin with an epitaxially-grown silicon-containing material, applying a spin-on resist over the dummy gate and the epitaxially-grown silicon-containing material and then removing the spin-on resist over the hard mask of the dummy gate, etching away the hard mask and a polysilicon of the dummy gate to expose a gate oxide of the dummy gate, the gate oxide disposed over the central portion of the fin, and implanting ions into the central portion of the fin through the gate oxide disposed over the central portion of the fin.