The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Nov. 12, 2010
Applicants:

Xinyu Fu, Fremont, CA (US);

Jick M. Yu, San Jose, CA (US);

Inventors:

Xinyu Fu, Fremont, CA (US);

Jick M. Yu, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 18/00 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53233 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 21/76867 (2013.01); H01L 21/76877 (2013.01); H01L 21/76855 (2013.01); H01L 23/53238 (2013.01); H01L 21/76831 (2013.01);
Abstract

Methods for forming interconnect or interconnections on a substrate for use in a microelectric device are disclosed. In one or more embodiments, the method includes depositing an alloy layer comprising Cu and an alloying element, for, example, Mn, in a dielectric layer and segregating or diffusing the alloying element from the bulk Cu portion of the alloy layer. In one or more embodiments, the method includes annealing the alloy layer in an atomic hydrogen atmosphere. After annealing, the alloy layer exhibits a resistivity that is substantially equivalent to the resistivity of a pure Cu layer.


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