The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8847191 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 30, 2014

Filed:

Mar. 27, 2012
Applicants:

Antonio R. Gallo, San Mateo, CA (US);

Foroozan Sarah Koushan, San Jose, CA (US);

Inventors:

Antonio R. Gallo, San Mateo, CA (US);

Foroozan Sarah Koushan, San Jose, CA (US);

Assignee:

Adesto Technologies Corporation, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device can include a plurality of memory elements, each including first electrode having a surrounding first electrode side surface in a lateral direction; a memory material surrounding the first electrode side surface in the lateral direction, the memory material being programmable between at least two different impedance states in response to electric fields; and a second electrode formed around the memory material in the lateral direction.


Find Patent Forward Citations

Gallo, Antonio. (2014). Programmable impedance memory elements, methods of manufacture, and memory devices containing the same (U.S. Patent No. 8847191). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8847191

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…